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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI4453DY-T1-GE3
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SI4453DY-T1-GE3

Manufacturer Part Number SI4453DY-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET P-CH 12V 10A 8SO
Package 8-SOIC
In Stock 6339 pcs
Data sheet
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 900mV @ 600µA
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SOIC
Series TrenchFET®
Rds On (Max) @ Id, Vgs 6.5mOhm @ 14A, 4.5V
Power Dissipation (Max) 1.5W (Ta)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 165 nC @ 5 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Base Product Number SI4453

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SI4453DY-T1-GE3 Datasheet PDF