SI4200DY-T1-GE3
| Manufacturer Part Number | SI4200DY-T1-GE3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Detailed Description | MOSFET 2N-CH 25V 8A 8SOIC |
| Package | 8-SOIC |
| In Stock | 5100 pcs |
| Data sheet | Mult Mosfet EOL 30/Aug/2018SI4200DY-T1-GE3 |
Reference Price (In US Dollars)
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 8-SOIC |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7.3A, 10V |
| Power - Max | 2.8W |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Package | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 415pF @ 13V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Configuration | 2 N-Channel (Dual) |
| Base Product Number | SI4200 |
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