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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI3529DV-T1-GE3
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SI3529DV-T1-GE3

Manufacturer Part Number SI3529DV-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET N/P-CH 40V 2.5A 6-TSOP
Package 6-TSOP
In Stock 6447 pcs
Data sheet SI3529DV
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package 6-TSOP
Series TrenchFET®
Rds On (Max) @ Id, Vgs 125mOhm @ 2.2A, 10V
Power - Max 1.4W
Package / Case SOT-23-6 Thin, TSOT-23-6
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 205pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 2.5A, 1.95A
Configuration N and P-Channel
Base Product Number SI3529

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SI3529DV-T1-GE3 Datasheet PDF

Data sheet

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