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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI2324DS-T1-BE3
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SI2324DS-T1-BE3

Manufacturer Part Number SI2324DS-T1-BE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET N-CH 100V 2.3A SOT-23
Package SOT-23-3 (TO-236)
In Stock 421867 pcs
Data sheet Material ComplianceSi2324DSMult Devs Manufacturing Capacity Expansion 13/Mar/
Reference Price (In US Dollars)
1 10 100 500 1000
$0.245 $0.21 $0.157 $0.123 $0.095
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.8V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-23-3 (TO-236)
Series TrenchFET®
Rds On (Max) @ Id, Vgs 234mOhm @ 1.5A, 10V
Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc)
Package / Case TO-236-3, SC-59, SOT-23-3
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 10.4 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta), 2.3A (Tc)
Base Product Number SI2324

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SI2324DS-T1-BE3 Datasheet PDF

Data sheet

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