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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI1011X-T1-GE3
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SI1011X-T1-GE3

Manufacturer Part Number SI1011X-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET P-CH 12V SC89-3
Package SC-89-3
In Stock 5125 pcs
Data sheet Material ComplianceMultiple Devices 14/Mar/2018SI1011X
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 800mV @ 250µA
Vgs (Max) ±5V
Technology MOSFET (Metal Oxide)
Supplier Device Package SC-89-3
Series TrenchFET®
Rds On (Max) @ Id, Vgs 640mOhm @ 400mA, 4.5V
Power Dissipation (Max) 190mW (Ta)
Package / Case SC-89, SOT-490
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 62 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs 4 nC @ 4.5 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 480mA (Ta)
Base Product Number SI1011

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SI1011X-T1-GE3 Datasheet PDF

Data sheet

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