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IRFD9110PBF
Reference Price (In US Dollars)
1
10
100
500
1000
2000
5000
10000
$0.636
$0.568
$0.443
$0.366
$0.289
$0.27
$0.256
$0.247
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
4-HVMDIP
Series
-
Rds On (Max) @ Id, Vgs
1.2Ohm @ 420mA, 10V
Power Dissipation (Max)
1.3W (Ta)
Package / Case
4-DIP (0.300", 7.62mm)
Package
Bulk
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
8.7 nC @ 10 V
FET Type
P-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
700mA (Ta)
Base Product Number
IRFD9110
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IRFD9110PBF Datasheet PDF
Data sheet
Datasheet File Browse
