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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > 2N6661JAN02
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2N6661JAN02

Manufacturer Part Number 2N6661JAN02
Manufacturer Vishay Siliconix
Detailed Description MOSFET N-CH 90V 860MA TO39
Package TO-39
In Stock 4122 pcs
Data sheet 2N6661(2)/2N6661JANTX(V)Mult Device OBS Update 15/May/2017Mil-QPL-Jfet 06/Jul/2016Material Compliance
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2V @ 1mA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-39
Series -
Rds On (Max) @ Id, Vgs 4Ohm @ 1A, 10V
Power Dissipation (Max) 725mW (Ta), 6.25W (Tc)
Package / Case TO-205AD, TO-39-3 Metal Can
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Drain to Source Voltage (Vdss) 90 V
Current - Continuous Drain (Id) @ 25°C 860mA (Tc)
Base Product Number 2N6661

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2N6661JAN02 Datasheet PDF

Data sheet

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