TW140N120C,S1F
| Manufacturer Part Number | TW140N120C,S1F |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Detailed Description | G3 1200V SIC-MOSFET TO-247 140M |
| Package | TO-247 |
| In Stock | 18229 pcs |
| Data sheet |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 |
|---|---|---|---|---|
| $4.612 | $4.166 | $3.449 | $3.004 | $2.616 |
Delivery Time
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RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Vgs (Max) | +25V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| Supplier Device Package | TO-247 |
| Series | - |
| Rds On (Max) @ Id, Vgs | 182mOhm @ 10A, 18V |
| Power Dissipation (Max) | 107W (Tc) |
| Package / Case | TO-247-3 |
| Package | Tube |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | 175°C |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 691 pF @ 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 18 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
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