TRS12E65F,S1Q
| Manufacturer Part Number | TRS12E65F,S1Q |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Detailed Description | DIODE SIL CARB 650V 12A TO220-2L |
| Package | TO-220-2L |
| In Stock | 31742 pcs |
| Data sheet |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 |
|---|---|---|---|---|
| $1.941 | $1.742 | $1.427 | $1.215 | $1.066 |
Delivery Time
Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Toshiba Semiconductor and Storage series electronic components. We have 31742 pieces of Toshiba Semiconductor and Storage TRS12E65F,S1Q in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Technology | SiC (Silicon Carbide) Schottky |
| Supplier Device Package | TO-220-2L |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Reverse Recovery Time (trr) | 0 ns |
| Package / Case | TO-220-2 |
| Product Attribute | Attribute Value |
|---|---|
| Package | Tube |
| Operating Temperature - Junction | 175°C (Max) |
| Mounting Type | Through Hole |
| Current - Reverse Leakage @ Vr | 90 µA @ 650 V |
| Current - Average Rectified (Io) | 12A |
| Capacitance @ Vr, F | 65pF @ 650V, 1MHz |
| Base Product Number | TRS12E65 |
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