TPC8012-H(TE12L,Q)
| Manufacturer Part Number | TPC8012-H(TE12L,Q) |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Detailed Description | MOSFET N-CH 200V 1.8A 8-SOP |
| Package | 8-SOP (5.5x6.0) |
| In Stock | 6343 pcs |
| Data sheet | TPC8012-HMosfets Prod Guide |
Reference Price (In US Dollars)
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Series | π-MOSV |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 900mA, 10V |
| Power Dissipation (Max) | 1W (Ta) |
| Packaging | Original-Reel® |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
| Other Names | TPC8012-HDKR TPC8012-HDKR-ND TPC8012-HQDKR TPC8012HTE12LQ |
| Operating Temperature | 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Detailed Description | N-Channel 200V 1.8A (Ta) 1W (Ta) Surface Mount 8-SOP (5.5x6.0) |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
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