TK9A90E,S4X
| Manufacturer Part Number | TK9A90E,S4X |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Detailed Description | MOSFET N-CH 900V 9A TO220SIS |
| Package | TO-220SIS |
| In Stock | 113561 pcs |
| Data sheet |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 | 2000 | 5000 | 10000 |
|---|---|---|---|---|---|---|---|
| $0.848 | $0.763 | $0.613 | $0.504 | $0.418 | $0.389 | $0.374 | $0.365 |
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 900µA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220SIS |
| Series | π-MOSVIII |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 4.5A, 10V |
| Power Dissipation (Max) | 50W (Tc) |
| Package / Case | TO-220-3 Full Pack |
| Package | Tube |
| Operating Temperature | 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Base Product Number | TK9A90 |
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