TK22E10N1,S1X
| Manufacturer Part Number | TK22E10N1,S1X |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Detailed Description | MOSFET N CH 100V 52A TO220 |
| Package | TO-220 |
| In Stock | 221918 pcs |
| Data sheet |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 | 2000 | 5000 | 10000 |
|---|---|---|---|---|---|---|---|
| $0.541 | $0.484 | $0.377 | $0.312 | $0.246 | $0.23 | $0.218 | $0.21 |
Delivery Time
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RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 300µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220 |
| Series | U-MOSVIII-H |
| Rds On (Max) @ Id, Vgs | 13.8mOhm @ 11A, 10V |
| Power Dissipation (Max) | 72W (Tc) |
| Package / Case | TO-220-3 |
| Package | Tube |
| Operating Temperature | 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Base Product Number | TK22E10 |
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