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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TK190E65Z,S1X
Toshiba Semiconductor and Storage

TK190E65Z,S1X

Manufacturer Part Number TK190E65Z,S1X
Manufacturer Toshiba Semiconductor and Storage
Detailed Description 650V DTMOS VI TO-220 190MOHM
Package TO-220
In Stock 77682 pcs
Data sheet
Reference Price (In US Dollars)
1 10 100 500 1000 2000 5000
$1.065 $0.957 $0.784 $0.667 $0.563 $0.535 $0.515
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 610µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220
Series -
Rds On (Max) @ Id, Vgs 190mOhm @ 7.5A, 10V
Power Dissipation (Max) 130W (Tc)
Package / Case TO-220-3
Package Tube
Product Attribute Attribute Value
Operating Temperature 150°C
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta)

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TK190E65Z,S1X Datasheet PDF