TK190E65Z,S1X
Manufacturer Part Number | TK190E65Z,S1X |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Detailed Description | 650V DTMOS VI TO-220 190MOHM |
Package | TO-220 |
In Stock | 77682 pcs |
Data sheet |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 | 2000 | 5000 |
---|---|---|---|---|---|---|
$1.065 | $0.957 | $0.784 | $0.667 | $0.563 | $0.535 | $0.515 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4V @ 610µA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220 |
Series | - |
Rds On (Max) @ Id, Vgs | 190mOhm @ 7.5A, 10V |
Power Dissipation (Max) | 130W (Tc) |
Package / Case | TO-220-3 |
Package | Tube |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | 150°C |
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 300 V |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
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