SSM6J215FE(TE85L,F
| Manufacturer Part Number | SSM6J215FE(TE85L,F |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Detailed Description | MOSFET P CH 20V 3.4A ES6 |
| Package | ES6 |
| In Stock | 649594 pcs |
| Data sheet |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 | 2000 |
|---|---|---|---|---|---|
| $0.174 | $0.149 | $0.111 | $0.088 | $0.068 | $0.062 |
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | ES6 |
| Series | U-MOSVI |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 3A, 4.5V |
| Power Dissipation (Max) | 500mW (Ta) |
| Package / Case | SOT-563, SOT-666 |
| Package | Tape & Reel (TR) |
| Operating Temperature | 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 10 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 4.5 V |
| FET Type | P-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Base Product Number | SSM6J215 |
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