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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN4981FE,LF(CB
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RN4981FE,LF(CB

Manufacturer Part Number RN4981FE,LF(CB
Manufacturer Toshiba Semiconductor and Storage
Detailed Description TRANS NPN/PNP PREBIAS 0.1W ES6
Package ES6
In Stock 2271853 pcs
Data sheet RN4981FE
Reference Price (In US Dollars)
4000
$0.019
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package ES6
Series -
Resistor - Emitter Base (R2) 4.7 kOhms
Resistor - Base (R1) 4.7 kOhms
Power - Max 100mW
Packaging Tape & Reel (TR)
Package / Case SOT-563, SOT-666
Product Attribute Attribute Value
Other Names RN4981FE(TE85L,F)
RN4981FE(TE85LF)TR
RN4981FE(TE85LF)TR-ND
RN4981FE,LF(CT
RN4981FELF(CBTR
RN4981FELF(CTTR
RN4981FELF(CTTR-ND
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 16 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz, 200MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA

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RN4981FE,LF(CB Datasheet PDF

Data sheet