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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN4906FE,LF(CB
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RN4906FE,LF(CB

Manufacturer Part Number RN4906FE,LF(CB
Manufacturer Toshiba Semiconductor and Storage
Detailed Description TRANS NPN/PNP PREBIAS 0.1W ES6
Package ES6
In Stock 4572 pcs
Data sheet RN4906FE
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package ES6
Series -
Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 4.7 kOhms
Power - Max 100mW
Packaging Cut Tape (CT)
Package / Case SOT-563, SOT-666
Product Attribute Attribute Value
Other Names RN4906FE(TE85LF)CT
RN4906FE(TE85LF)CT-ND
RN4906FELF(CBCT
RN4906FELF(CTCT
RN4906FELF(CTCT-ND
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 200MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA

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RN4906FE,LF(CB Datasheet PDF

Data sheet