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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN2906FE,LF(CT
Toshiba Semiconductor and Storage

RN2906FE,LF(CT

Manufacturer Part Number RN2906FE,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Detailed Description PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO
Package ES6
In Stock 396761 pcs
Data sheet
Reference Price (In US Dollars)
1
$0.092
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 PNP - Pre-Biased (Dual)
Supplier Device Package ES6
Series -
Resistor - Emitter Base (R2) 47kOhms
Resistor - Base (R1) 4.7kOhms
Power - Max 100mW
Product Attribute Attribute Value
Package / Case SOT-563, SOT-666
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA
Base Product Number RN2906

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RN2906FE,LF(CT Datasheet PDF