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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN1609(TE85L,F)
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RN1609(TE85L,F)

Manufacturer Part Number RN1609(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Detailed Description TRANS 2NPN PREBIAS 0.3W SM6
Package SM6
In Stock 1471551 pcs
Data sheet
Reference Price (In US Dollars)
3000 6000 15000 30000 75000 150000
$0.036 $0.032 $0.028 $0.027 $0.024 $0.023
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package SM6
Series -
Resistor - Emitter Base (R2) 22kOhms
Resistor - Base (R1) 47kOhms
Power - Max 300mW
Product Attribute Attribute Value
Package / Case SC-74, SOT-457
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA
Base Product Number RN1609

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RN1609(TE85L,F) Datasheet PDF