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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1130MFV,L3F
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RN1130MFV,L3F

Manufacturer Part Number RN1130MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Detailed Description TRANS PREBIAS NPN 50V 0.1A VESM
Package VESM
In Stock 1163247 pcs
Data sheet Multiple Devices 01/Jul/2014
Reference Price (In US Dollars)
1
$0.038
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Transistor Type NPN - Pre-Biased
Supplier Device Package VESM
Series -
Resistor - Emitter Base (R2) 100 kOhms
Resistor - Base (R1) 100 kOhms
Power - Max 150 mW
Product Attribute Attribute Value
Package / Case SOT-723
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 250 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100 mA
Base Product Number RN1130

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RN1130MFV,L3F Datasheet PDF

Data sheet