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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1116MFV,L3F
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RN1116MFV,L3F

Manufacturer Part Number RN1116MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Detailed Description TRANS PREBIAS NPN 50V 0.1A VESM
Package VESM
In Stock 3828668 pcs
Data sheet
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$0.068 $0.062 $0.034 $0.021 $0.014 $0.012
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type NPN - Pre-Biased
Supplier Device Package VESM
Series -
Resistor - Emitter Base (R2) 10 kOhms
Resistor - Base (R1) 4.7 kOhms
Power - Max 150 mW
Product Attribute Attribute Value
Package / Case SOT-723
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 250 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100 mA
Base Product Number RN1116

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RN1116MFV,L3F Datasheet PDF