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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1103MFV,L3XHF(CT
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RN1103MFV,L3XHF(CT

Manufacturer Part Number RN1103MFV,L3XHF(CT
Manufacturer Toshiba Semiconductor and Storage
Detailed Description AUTO AEC-Q NPN Q1BSR=22K, Q1BER=
Package VESM
In Stock 1875162 pcs
Data sheet
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$0.119 $0.097 $0.051 $0.034 $0.023 $0.021
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Transistor Type NPN - Pre-Biased
Supplier Device Package VESM
Series Automotive, AEC-Q101
Resistor - Emitter Base (R2) 22 kOhms
Resistor - Base (R1) 22 kOhms
Power - Max 150 mW
Product Attribute Attribute Value
Package / Case SOT-723
Package Tape & Reel (TR)
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100 mA
Base Product Number RN1103

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RN1103MFV,L3XHF(CT Datasheet PDF