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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > HN3C10FUTE85LF
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HN3C10FUTE85LF

Manufacturer Part Number HN3C10FUTE85LF
Manufacturer Toshiba Semiconductor and Storage
Detailed Description RF TRANS 2 NPN 12V 7GHZ US6
Package US6
In Stock 304012 pcs
Data sheet
Reference Price (In US Dollars)
1 10 100
$0.197 $0.169 $0.126
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 12V
Transistor Type 2 NPN (Dual)
Supplier Device Package US6
Series -
Power - Max 200mW
Package / Case 6-TSSOP, SC-88, SOT-363
Package Tape & Reel (TR)
Operating Temperature -
Product Attribute Attribute Value
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Mounting Type Surface Mount
Gain 11.5dB
Frequency - Transition 7GHz
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA, 10V
Current - Collector (Ic) (Max) 80mA
Base Product Number HN3C10

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HN3C10FUTE85LF Datasheet PDF