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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > HN2C01FE-GR(T5L,F)
Toshiba Semiconductor and Storage

HN2C01FE-GR(T5L,F)

Manufacturer Part Number HN2C01FE-GR(T5L,F)
Manufacturer Toshiba Semiconductor and Storage
Detailed Description TRANS 2NPN 50V 0.15A ES6
Package ES6
In Stock 5861 pcs
Data sheet EOL_X34_Oct_2014 Oct/2014HN2C01FE
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Transistor Type 2 NPN (Dual)
Supplier Device Package ES6
Series -
Power - Max 100mW
Package / Case SOT-563, SOT-666
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Frequency - Transition 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 150mA
Base Product Number HN2C01

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HN2C01FE-GR(T5L,F) Datasheet PDF

Data sheet