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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > HN1A01F-GR(TE85L,F
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HN1A01F-GR(TE85L,F

Manufacturer Part Number HN1A01F-GR(TE85L,F
Manufacturer Toshiba Semiconductor and Storage
Detailed Description TRANS 2PNP 50V 0.15A SM6
Package SM6
In Stock 3880 pcs
Data sheet HN1A01F
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Transistor Type 2 PNP (Dual)
Supplier Device Package SM6
Series -
Power - Max 300mW
Packaging Cut Tape (CT)
Package / Case SC-74, SOT-457
Other Names HN1A01F-GR(TE85LFCT
Product Attribute Attribute Value
Operating Temperature 125°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 80MHz
Detailed Description Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 80MHz 300mW Surface Mount SM6
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 150mA

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HN1A01F-GR(TE85L,F Datasheet PDF

Data sheet

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