GT40QR21(STA1,E,D
Manufacturer Part Number | GT40QR21(STA1,E,D |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Detailed Description | DISCRETE IGBT TRANSISTOR TO-3PN( |
Package | TO-3P(N) |
In Stock | 48308 pcs |
Data sheet |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 | 2000 | 5000 |
---|---|---|---|---|---|---|
$1.415 | $1.271 | $1.042 | $0.887 | $0.748 | $0.711 | $0.69 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 40A |
Test Condition | 280V, 40A, 10Ohm, 20V |
Td (on/off) @ 25°C | - |
Switching Energy | -, 290µJ (off) |
Supplier Device Package | TO-3P(N) |
Series | - |
Reverse Recovery Time (trr) | 600 ns |
Power - Max | 230 W |
Product Attribute | Attribute Value |
---|---|
Package / Case | TO-3P-3, SC-65-3 |
Package | Tube |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Input Type | Standard |
IGBT Type | - |
Current - Collector Pulsed (Icm) | 80 A |
Current - Collector (Ic) (Max) | 40 A |
Base Product Number | GT40QR21 |
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