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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > GT10J312(Q)
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GT10J312(Q)

Manufacturer Part Number GT10J312(Q)
Manufacturer Toshiba Semiconductor and Storage
Detailed Description IGBT 600V 10A 60W TO220SM
Package TO-220SM
In Stock 4679 pcs
Data sheet GT10J312
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Test Condition 300V, 10A, 100Ohm, 15V
Td (on/off) @ 25°C 400ns/400ns
Switching Energy -
Supplier Device Package TO-220SM
Series -
Reverse Recovery Time (trr) 200 ns
Power - Max 60 W
Product Attribute Attribute Value
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tube
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Input Type Standard
IGBT Type -
Current - Collector Pulsed (Icm) 20 A
Current - Collector (Ic) (Max) 10 A
Base Product Number GT10J312

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GT10J312(Q) Datasheet PDF

Data sheet