2SK3906(Q)
Manufacturer Part Number | 2SK3906(Q) |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Detailed Description | MOSFET N-CH 600V 20A TO3P |
Package | TO-3P(N) |
In Stock | 4309 pcs |
Data sheet | 2SK3906Mosfets Prod Guide |
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4V @ 1mA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-3P(N) |
Series | - |
Rds On (Max) @ Id, Vgs | 330mOhm @ 10A, 10V |
Power Dissipation (Max) | 150W (Tc) |
Package / Case | TO-3P-3, SC-65-3 |
Package | Bulk |
Operating Temperature | 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 4250 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
Base Product Number | 2SK3906 |
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