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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > 2SK3906(Q)
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2SK3906(Q)

Manufacturer Part Number 2SK3906(Q)
Manufacturer Toshiba Semiconductor and Storage
Detailed Description MOSFET N-CH 600V 20A TO3P
Package TO-3P(N)
In Stock 4309 pcs
Data sheet 2SK3906Mosfets Prod Guide
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-3P(N)
Series -
Rds On (Max) @ Id, Vgs 330mOhm @ 10A, 10V
Power Dissipation (Max) 150W (Tc)
Package / Case TO-3P-3, SC-65-3
Package Bulk
Operating Temperature 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 4250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Base Product Number 2SK3906

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2SK3906(Q) Datasheet PDF

Data sheet