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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > 2SK3565(Q,M)
Toshiba Semiconductor and Storage

2SK3565(Q,M)

Manufacturer Part Number 2SK3565(Q,M)
Manufacturer Toshiba Semiconductor and Storage
Detailed Description MOSFET N-CH 900V 5A TO220SIS
Package TO-220SIS
In Stock 5893 pcs
Data sheet Mosfets Prod Guide
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220SIS
Series π-MOSIV
Rds On (Max) @ Id, Vgs 2.5Ohm @ 3A, 10V
Power Dissipation (Max) 45W (Tc)
Package / Case TO-220-3 Full Pack
Package Bulk
Operating Temperature 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Base Product Number 2SK3565

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2SK3565(Q,M) Datasheet PDF

Data sheet