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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TSM60NB099PW C1G
Taiwan Semiconductor Corporation

TSM60NB099PW C1G

Manufacturer Part Number TSM60NB099PW C1G
Manufacturer Taiwan Semiconductor Corporation
Detailed Description MOSFET N-CHANNEL 600V 38A TO247
Package TO-247
In Stock 9167 pcs
Data sheet TSM60NB099PW
Reference Price (In US Dollars)
1 10 100 500 1000
$5.72 $5.257 $4.44 $3.95 $3.623
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-247
Series -
Rds On (Max) @ Id, Vgs 99mOhm @ 11.7A, 10V
Power Dissipation (Max) 329W (Tc)
Package / Case TO-247-3
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 2587 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Base Product Number TSM60

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TSM60NB099PW C1G Datasheet PDF

Data sheet