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Home > Products > Discrete Semiconductor Products > Diodes - Rectifiers - Single > 1N5407GHB0G
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1N5407GHB0G

Manufacturer Part Number 1N5407GHB0G
Manufacturer Taiwan Semiconductor Corporation
Detailed Description DIODE GEN PURP 800V 3A DO201AD
Package DO-201AD
In Stock 6280 pcs
Data sheet 1N5400G - 1N5408G
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Forward (Vf) (Max) @ If 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max) 800 V
Technology Standard
Supplier Device Package DO-201AD
Speed Standard Recovery >500ns, > 200mA (Io)
Series Automotive, AEC-Q101
Package / Case DO-201AD, Axial
Product Attribute Attribute Value
Package Bulk
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Through Hole
Current - Reverse Leakage @ Vr 5 µA @ 800 V
Current - Average Rectified (Io) 3A
Capacitance @ Vr, F 25pF @ 4V, 1MHz
Base Product Number 1N5407

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1N5407GHB0G Datasheet PDF

Data sheet

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