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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > GPA030A135MN-FDR
SemiQ

GPA030A135MN-FDR

Manufacturer Part Number GPA030A135MN-FDR
Manufacturer SemiQ
Detailed Description IGBT 1350V 60A 329W TO3PN
Package TO-3PN
In Stock 6678 pcs
Data sheet DK OBS NOTICEGPA030A135MN-FDR
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 1350 V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A
Test Condition 600V, 30A, 5Ohm, 15V
Td (on/off) @ 25°C 30ns/145ns
Switching Energy 4.4mJ (on), 1.18mJ (off)
Supplier Device Package TO-3PN
Series -
Reverse Recovery Time (trr) 450 ns
Power - Max 329 W
Product Attribute Attribute Value
Package / Case TO-3P-3, SC-65-3
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Input Type Standard
IGBT Type Trench Field Stop
Gate Charge 300 nC
Current - Collector Pulsed (Icm) 90 A
Current - Collector (Ic) (Max) 60 A

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GPA030A135MN-FDR Datasheet PDF

Data sheet