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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GP2T080A120H
SemiQ

GP2T080A120H

Manufacturer Part Number GP2T080A120H
Manufacturer SemiQ
Detailed Description SIC MOSFET 1200V 80M TO-247-4L
Package TO-247-4
In Stock 11951 pcs
Data sheet GP2T080A120H Datasheet
Reference Price (In US Dollars)
1 10 100 500 1000
$4.489 $4.126 $3.484 $3.1 $2.843
Delivery Time Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all SemiQ series electronic components. We have 11951 pieces of SemiQ GP2T080A120H in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 10mA
Vgs (Max) +25V, -10V
Technology SiCFET (Silicon Carbide)
Supplier Device Package TO-247-4
Series -
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
Power Dissipation (Max) 188W (Tc)
Package / Case TO-247-4
Package Tube
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 1377 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 20 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 20V
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Base Product Number GP2T080A

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GP2T080A120H Datasheet PDF

Data sheet