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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
5V @ 250µA
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
I-PAK
Series
-
Rds On (Max) @ Id, Vgs
4 Ohm @ 1A, 10V
Power Dissipation (Max)
52.1W (Tc)
Packaging
Tape & Reel (TR)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Product Attribute
Attribute Value
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds
360pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
9nC @ 10V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
600V
Detailed Description
N-Channel 600V 2A (Tc) 52.1W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Recommended Products
GP2M002A065FGMOSFET N-CH 650V 1.8A TO220FGlobal Power Technologies Group
GP2M004A060CGMOSFET N-CH 600V 4A DPAKGlobal Power Technologies Group
