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Home > Products > Discrete Semiconductor Products > Diodes - Rectifiers - Single > G4S06510DT
Global Power Technology-GPT

G4S06510DT

Manufacturer Part Number G4S06510DT
Manufacturer Global Power Technology-GPT
Detailed Description DIODE SIL CARBIDE 650V 32A TO263
Package TO-263
In Stock 19363 pcs
Data sheet G4S06510DT
Reference Price (In US Dollars)
1 10
$1.987 $1.783
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Specifications

Product Attribute Attribute Value
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max) 650 V
Technology SiC (Silicon Carbide) Schottky
Supplier Device Package TO-263
Speed No Recovery Time > 500mA (Io)
Series -
Reverse Recovery Time (trr) 0 ns
Product Attribute Attribute Value
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Cut Tape (CT)
Operating Temperature - Junction -55°C ~ 175°C
Mounting Type Surface Mount
Current - Reverse Leakage @ Vr 50 µA @ 650 V
Current - Average Rectified (Io) 32A
Capacitance @ Vr, F 550pF @ 0V, 1MHz

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G4S06510DT Datasheet PDF

Data sheet

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