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STS9P3LLH6
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
8-SO
Series
STripFET™ H6
Rds On (Max) @ Id, Vgs
15mOhm @ 4.5A, 10V
Power Dissipation (Max)
2.7W (Ta)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
2615 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 4.5 V
FET Type
P-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9A (Ta)
Base Product Number
STS9P
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Data sheet
Datasheet File Browse