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STP11NM65N
Reference Price (In US Dollars)
1
10
100
$0.88
$0.792
$0.636
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±25V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-220
Series
MDmesh™ II
Rds On (Max) @ Id, Vgs
455mOhm @ 5.5A, 10V
Power Dissipation (Max)
110W (Tc)
Package / Case
TO-220-3
Package
Tube
Operating Temperature
150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Base Product Number
STP11N
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Data sheet
Datasheet File Browse