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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > STI19NM65N
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STI19NM65N

Manufacturer Part Number STI19NM65N
Manufacturer STMicroelectronics
Detailed Description MOSFET N-CH 650V 15.5A I2PAK
Package I2PAK
In Stock 5948 pcs
Data sheet STx19NM65N
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±25V
Technology MOSFET (Metal Oxide)
Supplier Device Package I2PAK
Series MDmesh™ II
Rds On (Max) @ Id, Vgs 270mOhm @ 7.75A, 10V
Power Dissipation (Max) 150W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Package Tube
Operating Temperature 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 15.5A (Tc)
Base Product Number STI19N

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STI19NM65N Datasheet PDF

Data sheet

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