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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > HSG1002VE-TL-E
Renesas Electronics America Inc

HSG1002VE-TL-E

Manufacturer Part Number HSG1002VE-TL-E
Manufacturer Renesas Electronics America Inc
Detailed Description RF 0.035A C BAND GERMANIUM NPN
Package 4-MFPAK
In Stock 306966 pcs
Data sheet
Reference Price (In US Dollars)
706
$0.153
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 3.5V
Transistor Type NPN
Supplier Device Package 4-MFPAK
Series -
Power - Max 200mW
Package / Case 4-SMD, Gull Wing
Package Bulk
Product Attribute Attribute Value
Noise Figure (dB Typ @ f) 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Mounting Type Surface Mount
Gain 8dB ~ 19.5dB
Frequency - Transition 38GHz
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA, 2V
Current - Collector (Ic) (Max) 35mA

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HSG1002VE-TL-E Datasheet PDF