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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > 2SC3583-T1B-A
Renesas Electronics America Inc

2SC3583-T1B-A

Manufacturer Part Number 2SC3583-T1B-A
Manufacturer Renesas Electronics America Inc
Detailed Description 2SC3583 - MD
Package SOT23-3 (TO-236)
In Stock 194399 pcs
Data sheet
Reference Price (In US Dollars)
666
$0.175
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 10V
Transistor Type NPN
Supplier Device Package SOT23-3 (TO-236)
Series -
Power - Max 200mW
Package / Case TO-236-3, SC-59, SOT-23-3
Package Bulk
Product Attribute Attribute Value
Operating Temperature 150°C (TJ)
Noise Figure (dB Typ @ f) 1.2dB @ 1GHz
Mounting Type Surface Mount
Gain 13dB
Frequency - Transition 9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA, 8V
Current - Collector (Ic) (Max) 65mA

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2SC3583-T1B-A Datasheet PDF