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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RMD1N25ES9
Rectron USA

RMD1N25ES9

Manufacturer Part Number RMD1N25ES9
Manufacturer Rectron USA
Detailed Description MOSFET N-CHANNEL 25V 1.1A SOT363
Package SOT-363-6L
In Stock 1886409 pcs
Data sheet RMD1N25ES9
Reference Price (In US Dollars)
30000
$0.021
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 1.1V @ 250µA
Vgs (Max) ±12V
Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-363-6L
Series -
Rds On (Max) @ Id, Vgs 600mOhm @ 500mA, 4.5V
Power Dissipation (Max) 800mW (Ta)
Package / Case 6-TSSOP, SC-88, SOT-363
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 30 pF @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta)

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RMD1N25ES9 Datasheet PDF

Data sheet