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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RFD7N10LE

RFD7N10LE

Manufacturer Part Number RFD7N10LE
Manufacturer Harris Corporation
Detailed Description N-CHANNEL POWER MOSFET
Package TO-220-3
In Stock 176922 pcs
Data sheet
Reference Price (In US Dollars)
606
$0.194
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2V @ 250µA
Vgs (Max) +10V, -8V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220-3
Series -
Rds On (Max) @ Id, Vgs 300mOhm @ 7A, 5V
Power Dissipation (Max) 47W (Tc)
Package / Case TO-220-3
Package Bulk
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 5V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)

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RFD7N10LE Datasheet PDF