RF1S640SM
| Manufacturer Part Number | RF1S640SM |
|---|---|
| Manufacturer | Harris Corporation |
| Detailed Description | MOSFET N-CH 200V 18A TO263AB |
| Package | TO-263AB |
| In Stock | 37543 pcs |
| Data sheet |
Reference Price (In US Dollars)
| 110 |
|---|
| $0.972 |
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-263AB |
| Series | - |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 10V |
| Power Dissipation (Max) | 125W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Package | Bulk |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 1275 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
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