QJD1210010
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
5V @ 10mA
Technology
Silicon Carbide (SiC)
Supplier Device Package
Module
Series
-
Rds On (Max) @ Id, Vgs
25mOhm @ 100A, 20V
Power - Max
1080W
Package / Case
Module
Package
Bulk
Operating Temperature
-40°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Chassis Mount
Input Capacitance (Ciss) (Max) @ Vds
10200pF @ 800V
Gate Charge (Qg) (Max) @ Vgs
500nC @ 20V
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Configuration
2 N-Channel (Dual)
Base Product Number
QJD1210
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Data sheet
Datasheet File Browse