P3M12017K4
Manufacturer Part Number
P3M12017K4
Manufacturer
PN Junction Semiconductor
Detailed Description
SICFET N-CH 1200V 151A TO-247-4
Package
TO-247-4L
In Stock
2584 pcs
Data sheet
P3M12017K4
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.5V @ 75mA (Typ)
Vgs (Max)
+25V, -10V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
TO-247-4L
Series
P3M
Rds On (Max) @ Id, Vgs
24mOhm @ 75A, 15V
Power Dissipation (Max)
789W
Package / Case
TO-247-4
Product Attribute
Attribute Value
Package
Tube
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
15V
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
151A
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Data sheet
Datasheet File Browse