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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > PSMN4R3-100ES,127
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PSMN4R3-100ES,127

Manufacturer Part Number PSMN4R3-100ES,127
Manufacturer Nexperia USA Inc.
Detailed Description MOSFET N-CH 100V 120A I2PAK
Package I2PAK
In Stock 4372 pcs
Data sheet Label Chg 12/Mar/2017All Dev Label Chgs 2/Aug/2020Mult Dev EOL 03/Jul/2019PSMN4R3-100ES
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package I2PAK
Series -
Rds On (Max) @ Id, Vgs 4.3mOhm @ 25A, 10V
Power Dissipation (Max) 338W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 9900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)

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PSMN4R3-100ES,127 Datasheet PDF

Data sheet

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