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PSMN3R5-80ES,127
Reference Price (In US Dollars)
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 1mA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
I2PAK
Series
-
Rds On (Max) @ Id, Vgs
3.5mOhm @ 25A, 10V
Power Dissipation (Max)
338W (Tc)
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Package
Tube
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
9800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs
139 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
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PSMN3R5-80ES,127 Datasheet PDF
Data sheet
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