PSMN102-200Y,115
Reference Price (In US Dollars)
1
10
100
500
$0.601
$0.539
$0.42
$0.347
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 1mA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
LFPAK56, Power-SO8
Series
TrenchMOS™
Rds On (Max) @ Id, Vgs
102mOhm @ 12A, 10V
Power Dissipation (Max)
113W (Tc)
Package / Case
SC-100, SOT-669
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
1568 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs
30.7 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
21.5A (Tc)
Base Product Number
PSMN102
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PSMN102-200Y,115 Datasheet PDF
Data sheet
Datasheet File Browse