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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.7V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-236AB
Series
-
Rds On (Max) @ Id, Vgs
49mOhm @ 3.5A, 10V
Power Dissipation (Max)
710mW (Ta), 8.3W (Tc)
Package / Case
TO-236-3, SC-59, SOT-23-3
Package
Tape & Reel (TR)
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
450 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
3.5A (Ta)
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PMV40UN,215MOSFET N-CH 30V 4.9A TO236ABNXP USA Inc.
PMV37EN2RMOSFET N-CH 30V 4.5A TO236ABNexperia USA Inc.
PMV32UP/MIRMOSFET P-CH 20V 4A TO236ABNexperia USA Inc.
PMV37ENEARMOSFET N-CH 60V 3.5A TO236ABNexperia USA Inc.
PMV35EPERMOSFET P-CH 30V 5.3A TO236ABNexperia USA Inc.
