PHT6NQ10T,135
Manufacturer Part Number | PHT6NQ10T,135 |
---|---|
Manufacturer | Nexperia USA Inc. |
Detailed Description | MOSFET N-CH 100V 3A SOT223 |
Package | SOT-223 |
In Stock | 327494 pcs |
Data sheet | PHT6NQ10TMult Dev Carrier Tape Chg 16/Feb/2020All Dev Label Chgs 2/Aug/2020Resin Hardener 02/Jul/2013 |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 | 2000 |
---|---|---|---|---|---|
$0.342 | $0.304 | $0.237 | $0.196 | $0.155 | $0.144 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4V @ 1mA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | SOT-223 |
Series | TrenchMOS™ |
Rds On (Max) @ Id, Vgs | 90mOhm @ 3A, 10V |
Power Dissipation (Max) | 1.8W (Ta), 8.3W (Tc) |
Package / Case | TO-261-4, TO-261AA |
Package | Tape & Reel (TR) |
Operating Temperature | -65°C ~ 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 633 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
Base Product Number | PHT6NQ10 |
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