PHKD3NQ10T,518
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 1mA
Technology
MOSFET (Metal Oxide)
Supplier Device Package
8-SO
Series
TrenchMOS™
Rds On (Max) @ Id, Vgs
90mOhm @ 1.5A, 10V
Power - Max
2W
Package / Case
8-SOIC (0.154", 3.90mm Width)
Package
Tape & Reel (TR)
Operating Temperature
-65°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
633pF @ 20V
Gate Charge (Qg) (Max) @ Vgs
21nC @ 10V
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
3A
Configuration
2 N-Channel (Dual)
Base Product Number
PHKD3
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PHKD3NQ10T,518 Datasheet PDF
Data sheet
Datasheet File Browse
